850nm Si PIN modules

Model: GD4213Y/ GD4251Y/ GD4251Y-A/ GD42121Y

ʻO ka wehewehe pōkole:

ʻO 850nm Si PIN photodiode module me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

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ʻO ka fuse laser

Palena kiʻi uila（@Ta=22±3℃）

'ikamu #	Māhele pūʻolo	Anawaena o ka ʻili kiʻi kiʻi (mm)	Ka pane	Ke piʻi ʻana o ka manawa (ns)	Laina lohi （dB）	Volta hana (V)	Ka uila uila (mV)	Nā memo
'ikamu #	Māhele pūʻolo	Anawaena o ka ʻili kiʻi kiʻi (mm)	λ=850nm，φ_e=1μW		λ=850nm	Volta hana (V)	Ka uila uila (mV)	Nā memo
GD4213Y	TO-8	2	110	12	20	±5±0.3	12	-
GD4251Y		2	130	12	20	±6±0.3	40	(Angle o ka hanana: 0 °, transmittance o 830nm~910nm ≥90%
GD4251Y-A		10×1.5	130	18	20	±6±0.3	40
GD42121Y		10×0.95	110	20	20	±5±0.1	25
Nā memo: ʻO ka ukana hoʻāʻo o GD4213Y he 50Ω, ʻo ke koena ʻē aʻe he 1MΩ