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Nā Module APD InGaAs

Nā Module APD InGaAs

Ke Ana Hoʻohālike: GD6510Y/ GD6511Y/ GD6512Y

ʻO ka wehewehe pōkole:

ʻO ia ka indium gallium arsenide avalanche photodiode module me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.


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ʻĀpana ʻenehana

Huahana Huahana

Nā hiʻohiʻona

  • ʻO ka ʻaoʻao ʻaoʻao i hoʻomālamalama ʻia i ka pā pālahalaha
  • pane kiʻekiʻe-wikiwiki
  • Kiʻekiʻe sensitivity o ka detector

Nā noi

  • Hoʻopili laser
  • Kūkākūkā laser
  • Hoʻolaha laser

Palekana Photoelectric@Ta=22±3℃

'ikamu #

 

 

Māhele pūʻolo

 

 

Anawaena o ka ʻili kiʻi kiʻi (mm)

 

 

Laulā pane spectral

(nm)

 

 

Puke uila hoʻohaʻahaʻa

(V)

Ka pane

M=10

λ=1550nm

(kV/W)

 

 

 

 

Ke piʻi ʻana o ka manawa

(ns)

Kaʻeleʻele

(MHz)

Pānahana Coefficient

Ta=-40℃~85℃

(V/℃)

 

Mana like ka walaʻau (pW/√Hz)

 

Concentricity(μm)

Hoʻololi ʻia ke ʻano ma nā ʻāina ʻē aʻe

GD6510Y

 

 

TO-8

 

0.2

 

 

1000~1700

30~70

340

5

70

0.12

0.15

≤50

C3059-1550-R2A

GD6511Y

0.5

10

35

0.21

GD6512Y

0.08

2.3

150

0.11

C3059-1550-R08B


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