HANA

HANA

  • Nā Module APD InGaAs

    Nā Module APD InGaAs

    ʻO ia ka indium gallium arsenide avalanche photodiode module me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

  • APD ʻehā-quadrant

    APD ʻehā-quadrant

    Loaʻa iā ia nā ʻāpana like ʻehā o Si avalanche photodiode e hāʻawi ana i ka ʻike kiʻekiʻe mai ka UV a i ka NIR.ʻO 980nm ka lōʻihi o ka hawewe pane.Hāʻawi: 40 A/W ma 1064 nm.

  • ʻEhā-quadrant APD modules

    ʻEhā-quadrant APD modules

    Loaʻa iā ia nā ʻāpana like ʻehā o Si avalanche photodiode me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

  • 850nm Si PIN modules

    850nm Si PIN modules

    ʻO 850nm Si PIN photodiode module me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

  • 900nm Si PIN photodiode

    900nm Si PIN photodiode

    ʻO ia ʻo Si PIN photodiode e hana ana ma lalo o ka hoʻohuli ʻana a hāʻawi i ka ʻike kiʻekiʻe mai UV a i NIR.ʻO 930nm ka lōʻihi o ka hawewe pane.

  • 1064nm Si PIN photodiode

    1064nm Si PIN photodiode

    ʻO ia ʻo Si PIN photodiode e hana ana ma lalo o ka hoʻohuli ʻana a hāʻawi i ka ʻike kiʻekiʻe mai UV a i NIR.ʻO 980nm ka lōʻihi o ka hawewe pane.Hāʻawi: 0.3A/W ma 1064 nm.

  • Fiber Si PIN modules

    Fiber Si PIN modules

    Hoʻololi ʻia ka hōʻailona Optical i hōʻailona o kēia manawa ma ke hoʻokomo ʻana i ka fiber optical.ʻO ka module Si PIN me ka kaapuni pre-amplification e hiki ai ke hoʻonui ʻia ka hōʻailona nāwaliwali o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

  • ʻEhā-quadrant Si PIN

    ʻEhā-quadrant Si PIN

    Loaʻa iā ia nā ʻāpana like ʻehā o Si PIN photodiode e hana ana ma lalo o ka huli ʻana a hāʻawi i ka ʻike kiʻekiʻe mai UV a i NIR.ʻO 980nm ka lōʻihi o ka hawewe pane.Hāʻawi: 0.5 A/W ma 1064 nm.

  • ʻEhā-quadrant Si PIN modules

    ʻEhā-quadrant Si PIN modules

    Aia i hoʻokahi a pālua ʻia ʻehā mau ʻāpana like o Si PIN photodiode me ka kaapuni pre-amplification e hiki ai ke hoʻonui i ka hōʻailona o kēia manawa a hoʻololi i ka hōʻailona uila e hoʻokō i ke kaʻina hoʻololi o ka hoʻonui ʻana i ka photon-photoelectric-signal amplification.

  • Hoʻonui ʻia ʻo UV Si PIN

    Hoʻonui ʻia ʻo UV Si PIN

    ʻO Si PIN photodiode me ka UV i hoʻonui ʻia, e hana ana ma lalo o ka huli ʻana a hāʻawi i ka naʻau kiʻekiʻe mai UV a i NIR.ʻO 800nm ​​ka lōʻihi o ka hawewe pane.Hāʻawi: 0.15 A/W ma 340 nm.

  • 1064nm YAG Laser -15mJ-5

    1064nm YAG Laser -15mJ-5

    ʻO ia ka Q-switched Nd: YAG laser me 1064nm wavelength, ≥15mJ peak power, 1~5hz (hoʻololi) pulse repetition rate and ≤8mrad divergence angle.Eia kekahi, he laser liʻiliʻi a māmā a hiki ke hoʻokō i ka hoʻopuka ikehu kiʻekiʻe e hiki ke lilo i kumu kukui kūpono o ka mamao mamao no kekahi mau hiʻohiʻona i loaʻa nā koi koʻikoʻi no ka nui a me ke kaumaha, e like me ka hakakā pākahi a me ka UAV pili i kekahi mau hiʻohiʻona.

  • 1064nm YAG Laser-15mJ-20

    1064nm YAG Laser-15mJ-20

    ʻO ia ka Q-switched Nd: YAG laser me 1064nm wavelength, ≥15mJ peak mana a me ≤8mrad divergence angle.Eia kekahi, he laser liʻiliʻi a māmā ia e hiki ke lilo i kumu kukui maikaʻi o ka lōʻihi lōʻihi ma ke alapine kiʻekiʻe (20Hz).